MOSFET N-CH 100A 60V OPTIMOS3 TO252
- RS Stock No.:
- 8259162
- Mfr. Prt No.:
- IPD031N06L3GATMA1
- Brand:
- Infineon

Legislation and Compliance
RoHS Status: Exempt
Statement of Conformity
RS Components
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
Compliant Product Details
RS stock number | 8259162 |
Product description | MOSFET N-CH 100A 60V OPTIMOS3 TO252 |
Manufacturer / Brand | Infineon |
Manufacturer part number | IPD031N06L3GATMA1 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
Date | Apr 27, 2025 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
Specifications
Attribute | Value |
Brand | Infineon |
Maximum Power Dissipation | 167 W |
Number of Elements per Chip | 1 |
Series | OptiMOS 3 |
Minimum Operating Temperature | -55 °C |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Drain Source Resistance | 5.2 mΩ |
Mounting Type | Surface Mount |
Transistor Configuration | Single |
Package Type | DPAK (TO-252) |
Maximum Operating Temperature | +175 °C |
Length | 6.73 mm |
Typical Gate Charge @ Vgs | 59 nC @ 4.5 V |
Maximum Gate Threshold Voltage | 2.2 V |
Channel Type | N |
Height | 2.413 mm |
Width | 6.223 mm |
Minimum Gate Threshold Voltage | 1.2 V |
Channel Mode | Enhancement |
Pin Count | 3 |
Maximum Drain Source Voltage | 60 V |
Transistor Material | Si |
Maximum Continuous Drain Current | 100 A |